STF13N60M2,MOSFET N-CH 600V 0.35Ohm 11A Mdmesh M2.
制造商: STMicroelectronics
产品种类: MOSFET
技术: Si
安装风格: Through Hole
封装 / 箱体: TO-220-3
晶体管极性: N-Channel
通道数量: 1 Channel
Vds-漏源极击穿电压: 650 V
Id-连续漏极电流: 11 A
Rds On-漏源导通电阻: 380 mOhms
Vgs - 栅极-源极电压: - 25 V, + 25 V
Vgs th-栅源极阈值电压: 3 V
Qg-栅极电荷: 17 nC
最小工作温度: - 55 C
最大工作温度: + 150 C
Pd-功率耗散: 25 W
通道模式: Enhancement
商标名: MDmesh
封装: Tube
商标: STMicroelectronics
配置: Single
下降时间: 9.5 ns
产品类型: MOSFET
上升时间: 10 ns
系列: STF13N60M2
子类别: MOSFETs
晶体管类型: 1 N-Channel
典型关闭延迟时间: 41 ns
典型接通延迟时间: 11 ns
单位重量: 2 g
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